Electronic Devices and Circuits The depletion layer width of Junction Is increased under reverse bias Decreases with light doping Increases with heavy doping Is independent of applied voltage Is increased under reverse bias Decreases with light doping Increases with heavy doping Is independent of applied voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Piezoelectric quartz crystal resonators find application where Modulation of signal is required Signal frequency control is required Rectification of the signal is required Signal amplification is required Modulation of signal is required Signal frequency control is required Rectification of the signal is required Signal amplification is required ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Wideband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Drift of holes Diffusion of holes Drift of electrons Diffusion of electrons Drift of holes Diffusion of holes Drift of electrons Diffusion of electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 10 eV 5 eV 0.78 eV 2 eV 10 eV 5 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
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