Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes Electrons Ions Holes and electrons Holes Electrons Ions Holes and electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? No hysteresis High dielectric constant Electric dipole moment Ferroelectric characteristic only above the curie point No hysteresis High dielectric constant Electric dipole moment Ferroelectric characteristic only above the curie point ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors All of these Metals Insulators Semiconductors All of these Metals Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Increases with heavy doping Decreases with light doping Is increased under reverse bias Is independent of applied voltage Increases with heavy doping Decreases with light doping Is increased under reverse bias Is independent of applied voltage ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS