Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Potential barrier Forward bias voltage None of these Rate of thermal generation of electron hole pairs Potential barrier Forward bias voltage None of these Rate of thermal generation of electron hole pairs ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Reverse bias Forward bias Zero or reverse bias Zero bias Reverse bias Forward bias Zero or reverse bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Metals Semiconductors All of these Insulators Metals Semiconductors All of these Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 10 A 1 A 20 A 100 A 10 A 1 A 20 A 100 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes and electrons Holes Electrons Ions Holes and electrons Holes Electrons Ions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
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