Electronic Devices and Circuits Light dependent resistors are Either A or B Lightly doped semiconductor Highly doped semiconductor Intrinsic semiconductor Either A or B Lightly doped semiconductor Highly doped semiconductor Intrinsic semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Zero or reverse bias Reverse bias Forward bias Zero bias Zero or reverse bias Reverse bias Forward bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Wideband gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 2 eV 5 eV 10 eV 0.78 eV 2 eV 5 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An electron in the conduction band Has higher energy than the electron in the valence band Has lower energy than the electron in the valence band Jumps to the top of the crystal Loses its charge easily Has higher energy than the electron in the valence band Has lower energy than the electron in the valence band Jumps to the top of the crystal Loses its charge easily ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
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