Electronic Devices and Circuits
Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is

Normal to both current and magnetic field
In arbitrary direction
Antiparallel to magnetic field
In the direction of current

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Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

A is true but R is false
Both A and R are true and R is correct explanation of A
A is false but R is true
Both A and R are true but R is not a correct explanation of A

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Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons and holes increase by the same amount
The number of free electrons increases
The number of free electrons and holes increase but not by the same amount
The number of free electrons increases but the number of holes decreases

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