Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Forward bias Reverse bias Zero bias Zero or forward bias Forward bias Reverse bias Zero bias Zero or forward bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Free electrons in N-region only Majority as well as minority carriers in both regions Majority carriers in both regions Holes in P-region only Free electrons in N-region only Majority as well as minority carriers in both regions Majority carriers in both regions Holes in P-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Highly doped semiconductor Lightly doped semiconductor Either A or B Intrinsic semiconductor Highly doped semiconductor Lightly doped semiconductor Either A or B Intrinsic semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Piezoelectric quartz crystal resonators find application where Modulation of signal is required Signal amplification is required Rectification of the signal is required Signal frequency control is required Modulation of signal is required Signal amplification is required Rectification of the signal is required Signal frequency control is required ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
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