Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons and holes increase by the same amount
The number of free electrons increases but the number of holes decreases
The number of free electrons increases
The number of free electrons and holes increase but not by the same amount

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Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

A is false but R is true
A is true but R is false
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A

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