Electronic Devices and Circuits Fermi level is the amount of energy in which An electron can have at room temperature Must be given to an electron move to conduction band A hole can have at room temperature None of these An electron can have at room temperature Must be given to an electron move to conduction band A hole can have at room temperature None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits If too large current passes through the diode All holes will freeze Diode will emit light All electrons will leave Excessive heat may damage the diode All holes will freeze Diode will emit light All electrons will leave Excessive heat may damage the diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons increases The number of free electrons and holes increase by the same amount The number of free electrons and holes increase but not by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons increases The number of free electrons and holes increase by the same amount The number of free electrons and holes increase but not by the same amount The number of free electrons increases but the number of holes decreases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 500 mg 100 mg 150 mg 200 mg 500 mg 100 mg 150 mg 200 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is increased under reverse bias Is independent of applied voltage Decreases with light doping Increases with heavy doping Is increased under reverse bias Is independent of applied voltage Decreases with light doping Increases with heavy doping ANSWER DOWNLOAD EXAMIANS APP
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