Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed one third the breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is None of these Silicon Mixture of silicon and germanium Germanium None of these Silicon Mixture of silicon and germanium Germanium ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Evaporation Diffusion process Oxidation None Evaporation Diffusion process Oxidation None ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase by the same amount The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Potential barrier Rate of thermal generation of electron hole pairs Forward bias voltage None of these Potential barrier Rate of thermal generation of electron hole pairs Forward bias voltage None of these ANSWER DOWNLOAD EXAMIANS APP
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