Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

may be equal to or less than breakdown voltage
should not exceed one third the breakdown voltage
should not exceed the breakdown voltage
should not exceed half the breakdown voltage

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Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

An ohmic region at low voltage value followed by a saturation region at higher voltages
Only a saturation region
An ohmic region at large voltage values preceded by a saturation region at lower voltages
Only an ohmic region

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Electronic Devices and Circuits
Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is false but R is true
A is true but R is false

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Electronic Devices and Circuits
Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

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