Electronic Devices and Circuits
Silicon is not suitable for fabrication of light emitting diodes because it is

Wideband gap semiconductor
An indirect band gap semiconductor
Direct band gap semiconductor
Narrowband gap semiconductor

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Electronic Devices and Circuits
Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

A is false but R is true
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false

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Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

A is true but R is false
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is false but R is true

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