Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? PIN diode Zener diode Schottky diode Tunnel diode PIN diode Zener diode Schottky diode Tunnel diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 200 mg 500 mg 100 mg 150 mg 200 mg 500 mg 100 mg 150 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Diffusion process Evaporation Oxidation None Diffusion process Evaporation Oxidation None ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An electron in the conduction band Loses its charge easily Has higher energy than the electron in the valence band Jumps to the top of the crystal Has lower energy than the electron in the valence band Loses its charge easily Has higher energy than the electron in the valence band Jumps to the top of the crystal Has lower energy than the electron in the valence band ANSWER DOWNLOAD EXAMIANS APP
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