Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? High dielectric constant No hysteresis Electric dipole moment Ferroelectric characteristic only above the curie point High dielectric constant No hysteresis Electric dipole moment Ferroelectric characteristic only above the curie point ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 200 mg 150 mg 500 mg 100 mg 200 mg 150 mg 500 mg 100 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally Silicon diodes None of these Either of the above Germanium diodes Silicon diodes None of these Either of the above Germanium diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of electrons Drift of holes Diffusion of holes Drift of electrons Diffusion of electrons Drift of holes Diffusion of holes Drift of electrons ANSWER DOWNLOAD EXAMIANS APP
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