Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Reverse bias Forward bias Zero or reverse bias Zero bias Reverse bias Forward bias Zero or reverse bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits If too large current passes through the diode All holes will freeze Diode will emit light Excessive heat may damage the diode All electrons will leave All holes will freeze Diode will emit light Excessive heat may damage the diode All electrons will leave ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows For full cycle For less than fourth cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal For full cycle For less than fourth cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? Electric dipole moment No hysteresis High dielectric constant Ferroelectric characteristic only above the curie point Electric dipole moment No hysteresis High dielectric constant Ferroelectric characteristic only above the curie point ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Evaporation Oxidation None Diffusion process Evaporation Oxidation None Diffusion process ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS