Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Narrowband gap semiconductor Wideband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Decreases with light doping Is independent of applied voltage Is increased under reverse bias Increases with heavy doping Decreases with light doping Is independent of applied voltage Is increased under reverse bias Increases with heavy doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Fermi level is the amount of energy in which An electron can have at room temperature Must be given to an electron move to conduction band A hole can have at room temperature None of these An electron can have at room temperature Must be given to an electron move to conduction band A hole can have at room temperature None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An electron in the conduction band Has lower energy than the electron in the valence band Has higher energy than the electron in the valence band Jumps to the top of the crystal Loses its charge easily Has lower energy than the electron in the valence band Has higher energy than the electron in the valence band Jumps to the top of the crystal Loses its charge easily ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
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