Electronic Devices and Circuits
Silicon is not suitable for fabrication of light emitting diodes because it is

An indirect band gap semiconductor
Wideband gap semiconductor
Narrowband gap semiconductor
Direct band gap semiconductor

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Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

An ohmic region at large voltage values preceded by a saturation region at lower voltages
An ohmic region at low voltage value followed by a saturation region at higher voltages
Only a saturation region
Only an ohmic region

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