Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by None Diffusion process Oxidation Evaporation None Diffusion process Oxidation Evaporation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority as well as minority carriers in both regions Majority carriers in both regions Free electrons in N-region only Holes in P-region only Majority as well as minority carriers in both regions Majority carriers in both regions Free electrons in N-region only Holes in P-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has better thermal stability All of these Is less noisy Has higher input resistance Has better thermal stability All of these Is less noisy Has higher input resistance ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 100 A 1 A 10 A 20 A 100 A 1 A 10 A 20 A ANSWER DOWNLOAD EXAMIANS APP
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