Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of electrons Drift of holes Diffusion of holes Drift of electrons Diffusion of electrons Drift of holes Diffusion of holes Drift of electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 500 mg 100 mg 200 mg 150 mg 500 mg 100 mg 200 mg 150 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Silicon Germanium Mixture of silicon and germanium None of these Silicon Germanium Mixture of silicon and germanium None of these ANSWER DOWNLOAD EXAMIANS APP
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