Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has Only a saturation region Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Holes in P-region only Majority carriers in both regions Majority as well as minority carriers in both regions Free electrons in N-region only Holes in P-region only Majority carriers in both regions Majority as well as minority carriers in both regions Free electrons in N-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 20 A 100 A 1 A 10 A 20 A 100 A 1 A 10 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Insulators Semiconductors All of these Metals Insulators Semiconductors All of these Metals ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS