Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits How many free electrons does a p type semiconductor has? Only those produced by thermal energy Any of the above Those produced by doping as well as thermal energy Only those produced by doping Only those produced by thermal energy Any of the above Those produced by doping as well as thermal energy Only those produced by doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is increased under reverse bias Decreases with light doping Is independent of applied voltage Increases with heavy doping Is increased under reverse bias Decreases with light doping Is independent of applied voltage Increases with heavy doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Forward bias Reverse bias Zero bias Zero or reverse bias Forward bias Reverse bias Zero bias Zero or reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
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