Electronic Devices and Circuits The most commonly used semiconductor material is Silicon Germanium None of these Mixture of silicon and germanium Silicon Germanium None of these Mixture of silicon and germanium ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 99 0.99 100 1.01 99 0.99 100 1.01 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Electrons Holes and electrons Ions Holes Electrons Holes and electrons Ions Holes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Intrinsic semiconductor Highly doped semiconductor Lightly doped semiconductor Either A or B Intrinsic semiconductor Highly doped semiconductor Lightly doped semiconductor Either A or B ANSWER DOWNLOAD EXAMIANS APP