Power Electronics Which of following devices has highest di/dt and dv/dt capability? SITH. SIT. GTO. SCR. SITH. SIT. GTO. SCR. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What is used to protect the SCR from over current ? Snubber circuit. Heat sink. CB and fuse. Voltage clamping device. Snubber circuit. Heat sink. CB and fuse. Voltage clamping device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What may happen high dV / dt? Anyone of these. Both A and B. Unwanted turn ON. Breakdown of J2 junction. Anyone of these. Both A and B. Unwanted turn ON. Breakdown of J2 junction. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Latching current for an SCR inserted between a dc voltage source of 200 V and load is 100 mA. Compute the minimum rate of width pulse required to turn ON the SCR in case load consists of R = 20 Ω in series with L = 0.2 H. 150 µs. 200 µs. 300 µs. 100 µs. 150 µs. 200 µs. 300 µs. 100 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power MOSFET has three terminals called Drain, source and gate. Drain, source and base. Collector, emitter and base. Collector, emitter and gate. Drain, source and gate. Drain, source and base. Collector, emitter and base. Collector, emitter and gate. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Materials used in heat sink should have large surface area. All of these. high thermal conductivity. high melting point. large surface area. All of these. high thermal conductivity. high melting point. ANSWER DOWNLOAD EXAMIANS APP
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