Power Electronics The latching current of GTO should be of order 100 mA. 500 mA. 2 A. 1 A. 100 mA. 500 mA. 2 A. 1 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to High di/dt. High dv/dt. Low dv/dt. Low di/dt. High di/dt. High dv/dt. Low dv/dt. Low di/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SIT. SITH. GTO. SCR. SIT. SITH. GTO. SCR. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During which time maximum conduction spreading take place in the thyristor during turn ON? Rise time. Spread time. Delay time. Same for every case. Rise time. Spread time. Delay time. Same for every case. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 1000 V/µs. 600 V/µs. 800 V/µs. 1200 V/µs. 1000 V/µs. 600 V/µs. 800 V/µs. 1200 V/µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In reverse blocking mode of a thyristor junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. ANSWER DOWNLOAD EXAMIANS APP
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