Power Electronics Compared to transistor, ______________ have lower on state conduction losses and higher power handling capability Semi conductor diodes. MOSFETs. TRIACs. Thyristor. Semi conductor diodes. MOSFETs. TRIACs. Thyristor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Rise time is defined by the interval when both B and C. gate current rises from 90 % to 100 % of it final value. anode current rises 10 % to 90 % of its final value. anode voltage drops from 90 % to 10 % of its initial value. both B and C. gate current rises from 90 % to 100 % of it final value. anode current rises 10 % to 90 % of its final value. anode voltage drops from 90 % to 10 % of its initial value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. GTO. IGBT. FCT. MCT. GTO. IGBT. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SCR will be turned off when anode current is less than holding current. < latching current but greater than holding current and gate signal is present. both (A) and (B). < latching current but greater than holding current and gate signal is 0. less than holding current. < latching current but greater than holding current and gate signal is present. both (A) and (B). < latching current but greater than holding current and gate signal is 0. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Snubber circuit is used with SCR in parallel. in series. either series or parallel. anti parallel. in parallel. in series. either series or parallel. anti parallel. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The maximum di/dt in a SCR is Directly proportional to inductance in the circuit. Both A and B. Inversely proportional to supply voltage. Directly proportional to supply voltage. Directly proportional to inductance in the circuit. Both A and B. Inversely proportional to supply voltage. Directly proportional to supply voltage. ANSWER DOWNLOAD EXAMIANS APP
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