Power Electronics A power semiconductor may undergo damage due to High di/dt. Low dv/dt. High dv/dt. Low di/dt. High di/dt. Low dv/dt. High dv/dt. Low di/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Gate circuit or triggering circuit of a thyristor is lower power circuit. high power circuit. magnetic circuit. may be low power or high power circuit. lower power circuit. high power circuit. magnetic circuit. may be low power or high power circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Materials used in heat sink should have large surface area. high melting point. high thermal conductivity. All of these. large surface area. high melting point. high thermal conductivity. All of these. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is disadvantage of fast recovery diodes? Recovery is only 5 µs. None of these. Doping is carried out. Recovery is only 50 µs. Recovery is only 5 µs. None of these. Doping is carried out. Recovery is only 50 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If holding current of a thyristor is 2 mA then latching current should be 0.004 A. 0.009 A. 0.01 A. 0.002 A. 0.004 A. 0.009 A. 0.01 A. 0.002 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following is normally ON device TRIAC. IGBT. BJT. SIT. TRIAC. IGBT. BJT. SIT. ANSWER DOWNLOAD EXAMIANS APP
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