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Power Electronics

Power Electronics
To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage.

None of these
Less than
More than
Equal to

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Power Electronics
Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then

 Vc1 > Vc2 > Vc3 when Ig1= Ig2
 Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3.
  Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3.
 Vc1 = Vc2 = Vc3 any value of Ig.

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Power Electronics
To meet high current demand we use SCRs in

  parallel connection.
 anti parallel connection.
 series connection.
 both B and C.

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Power Electronics
A power semiconductor may undergo damage due to

 High dv/dt.
  High di/dt.
 Low dv/dt.
 Low di/dt.

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Power Electronics
A power MOSFET has three terminals called

  Drain, source and gate.
 Collector, emitter and base.
 Collector, emitter and gate.
 Drain, source and base.

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Power Electronics
A string of n parallel SCRs is operated at 72 KA, the rating of each SCR is 1 KA. If derating factor of the string is 0.1. Then calculate the value of n

  80.
 90.
 60.
 70.

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