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Power Electronics

Power Electronics
The device that exhibits negative resistance region is ___________.

Transistor
Triac
UJT
Diac

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Power Electronics
Which of following is normally ON device

 BJT.
 IGBT.
 TRIAC.
  SIT.

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Power Electronics
To meet high current demand we use SCRs in

  parallel connection.
 both B and C.
 series connection.
 anti parallel connection.

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Power Electronics
IGBT combines the advantages of

 SITs and MOSFETs.
 None of these.
  BJTs and MOSFETs.
 BJTs and SITs.

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Power Electronics
After peak point, the UJT operates in the ___________ region.

Negative resistance
Cut-off
Saturation
None of these

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Power Electronics
Which one is most suitable power device for high frequency (>100 KHz) switching application?

 Schottky diode.
  Power MOSFET.
 Microwave transistor.
 BJT.

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