Power Electronics The device that exhibits negative resistance region is ___________. UJT Transistor Diac Triac UJT Transistor Diac Triac ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What may happen high dV / dt? Both A and B. Breakdown of J2 junction. Unwanted turn ON. Anyone of these. Both A and B. Breakdown of J2 junction. Unwanted turn ON. Anyone of these. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of SITs and MOSFETs. None of these. BJTs and MOSFETs. BJTs and SITs. SITs and MOSFETs. None of these. BJTs and MOSFETs. BJTs and SITs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is disadvantage of fast recovery diodes? Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. None of these. Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. None of these. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The triac is ___________. Not a thyristor Like a bidirectional SCR None of these A four-terminal device Not a thyristor Like a bidirectional SCR None of these A four-terminal device ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Increases Remains the same Decreases None of these Increases Remains the same Decreases None of these ANSWER DOWNLOAD EXAMIANS APP
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