Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Schottky diode. BJT. Microwave transistor. Power MOSFET. Schottky diode. BJT. Microwave transistor. Power MOSFET. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Remains the same Increases None of these Decreases Remains the same Increases None of these Decreases ANSWER DOWNLOAD EXAMIANS APP
Power Electronics After proper turn on of thyristor gate signal is always present. gate signal should present but can be removed. gate signal must be removed. None of these gate signal is always present. gate signal should present but can be removed. gate signal must be removed. None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. IGBT. MCT. FCT. GTO. IGBT. MCT. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Leakage current flows through the thyristor in forward blocking mode. both forward and reverse blocking mode. reverse blocking mode. forward conduction mode. forward blocking mode. both forward and reverse blocking mode. reverse blocking mode. forward conduction mode. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac is equivalent to two SCRs ___________. In parallel None of these In inverse-parallel In series In parallel None of these In inverse-parallel In series ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS