Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Microwave transistor. Schottky diode. Power MOSFET. BJT. Microwave transistor. Schottky diode. Power MOSFET. BJT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Materials used in heat sink should have high thermal conductivity. large surface area. high melting point. All of these. high thermal conductivity. large surface area. high melting point. All of these. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The function of snubber circuit connected across the SCR is to suppress dV / dt. decrease di / dt. decrease dV / dt. increase dV / dt. suppress dV / dt. decrease di / dt. decrease dV / dt. increase dV / dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A UJT has ___________. None of these Three pn junctions Two pn junctions One pn junction None of these Three pn junctions Two pn junctions One pn junction ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a UJT, the p-type emitter is ___________ doped Heavily None of these Moderately Lightly Heavily None of these Moderately Lightly ANSWER DOWNLOAD EXAMIANS APP
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