Power Electronics In a P1N1P2N2 thyristor which layer is less doped ? N1. P2. P1. N2. N1. P2. P1. N2. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Rise time is defined by the interval when anode voltage drops from 90 % to 10 % of its initial value. both B and C. anode current rises 10 % to 90 % of its final value. gate current rises from 90 % to 100 % of it final value. anode voltage drops from 90 % to 10 % of its initial value. both B and C. anode current rises 10 % to 90 % of its final value. gate current rises from 90 % to 100 % of it final value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT. MCT. GTO. FCT. IGBT. MCT. GTO. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SCRs are used in series to meet high current demand. high voltage demand. low voltage demand. low current demand. high current demand. high voltage demand. low voltage demand. low current demand. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Schottky diode. Microwave transistor. Power MOSFET. BJT. Schottky diode. Microwave transistor. Power MOSFET. BJT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Delay time is defined by the interval when anode voltage drops from 100 % to 90 % of its actual value. gate current increases from 90 % to 100 % of its final value. all of these. anode current reaches 10 % from forward leakage current. anode voltage drops from 100 % to 90 % of its actual value. gate current increases from 90 % to 100 % of its final value. all of these. anode current reaches 10 % from forward leakage current. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS