Power Electronics During reverse recovery time charge carrier of junction J3 is swept out. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. both B and C. charge carrier of junction J3 is swept out. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. both B and C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is infinity. low. high. moderate. infinity. low. high. moderate. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? BJT. Power MOSFET. Schottky diode. Microwave transistor. BJT. Power MOSFET. Schottky diode. Microwave transistor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________. Extremely low Low High None of these Extremely low Low High None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics ON state voltage drop across SCR lie between the range 1 - 1.5 V. 1.5 - 2 V. 0.5 - 1 V. 0 - 0.5 V. 1 - 1.5 V. 1.5 - 2 V. 0.5 - 1 V. 0 - 0.5 V. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ terminals. Two Four None of these Three Two Four None of these Three ANSWER DOWNLOAD EXAMIANS APP