Power Electronics What happen due to high di / dt? Insulation failure. None of these. Breakdown of junction. Local hot spot. Insulation failure. None of these. Breakdown of junction. Local hot spot. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 140 μs. 130 μs. 145 μs. 135 μs. 140 μs. 130 μs. 145 μs. 135 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What may happen high dV / dt? Unwanted turn ON. Both A and B. Anyone of these. Breakdown of J2 junction. Unwanted turn ON. Both A and B. Anyone of these. Breakdown of J2 junction. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time both B and C. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. both B and C. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Leakage current flows through the thyristor in reverse blocking mode. forward conduction mode. forward blocking mode. both forward and reverse blocking mode. reverse blocking mode. forward conduction mode. forward blocking mode. both forward and reverse blocking mode. ANSWER DOWNLOAD EXAMIANS APP
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