Power Electronics After proper turn on of thyristor None of these gate signal is always present. gate signal should present but can be removed. gate signal must be removed. None of these gate signal is always present. gate signal should present but can be removed. gate signal must be removed. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 135 μs. 145 μs. 130 μs. 140 μs. 135 μs. 145 μs. 130 μs. 140 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics COOLMOS device can be used in application up to power range of 100 KVA. 1 KVA. 500 VA. 2 KVA. 100 KVA. 1 KVA. 500 VA. 2 KVA. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During gate recovery time charge carrier of J1 junction removed. charge carriers of J3 junction is removed. charge carriers of J2 junction is swept out. charge carriers of J2 junction recombined. charge carrier of J1 junction removed. charge carriers of J3 junction is removed. charge carriers of J2 junction is swept out. charge carriers of J2 junction recombined. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which statement is true for latching current ? It is related to turn off process of the device. It is related to turn on process of the device. It is related to conduction process of device. Both C and D. It is related to turn off process of the device. It is related to turn on process of the device. It is related to conduction process of device. Both C and D. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Power MOSFET. BJT. Schottky diode. Microwave transistor. Power MOSFET. BJT. Schottky diode. Microwave transistor. ANSWER DOWNLOAD EXAMIANS APP
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