Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 135 μs. 145 μs. 140 μs. 130 μs. 135 μs. 145 μs. 140 μs. 130 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A single phase one pulse controlled circuit has a resistance R and counter emf E load 400 sin(314 t) as the source voltage. For a load counter emf of 200 V, the range of firing angle control is 30° to 180°. 60° to 120°. 60° to 180°. 30° to 150°. 30° to 180°. 60° to 120°. 60° to 180°. 30° to 150°. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What is used to protect a thyristor from high di / dt conditions? Fuse. Snubber circuit. Voltage clamping device. Inductor. Fuse. Snubber circuit. Voltage clamping device. Inductor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A UJT is sometimes called ___________ diode. High resistance Low resistance Double-base Single-base High resistance Low resistance Double-base Single-base ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Maximum di / dt in a SCR is inversely proportional to Vm of supply voltage. both A and C. directly proportional to Vm of supply voltage. inversely proportional to L in the circuit. inversely proportional to Vm of supply voltage. both A and C. directly proportional to Vm of supply voltage. inversely proportional to L in the circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. GTO. IGBT. FCT. MCT. GTO. IGBT. FCT. ANSWER DOWNLOAD EXAMIANS APP
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