Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A UJT is sometimes called ___________ diode. Low resistance Double-base Single-base High resistance Low resistance Double-base Single-base High resistance ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thyristor is nothing but a Amplifier with large current gain. Controlled transistor. Controlled switch. Amplifier with higher gain. Amplifier with large current gain. Controlled transistor. Controlled switch. Amplifier with higher gain. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? GTO. SITH. SCR. SIT. GTO. SITH. SCR. SIT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is moderate. low. high. infinity. moderate. low. high. infinity. ANSWER DOWNLOAD EXAMIANS APP
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