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Power Electronics

Power Electronics
A modern power semiconductor device that combines the characteristic of BJT and MOSFET is

  IGBT.
 MCT.
 GTO.
 FCT.

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Power Electronics
Which of the following is used in heat sink?

 Silver.
 Carbon.
  Aluminium.
 Iron.

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Power Electronics
A diac has ___________ semiconductor layers

Two
Four
None of these
Three

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Power Electronics
A 200 A thyristor is to be operated in parallel with a 300 A thyristor. The ON state voltage drops are 1.5 V and 1.2 Volts. What is the value of resistance R to be connected in series with each thyristor, so that current through the combination is 500 A and each of them is fully loaded ?

 3.0 ohm
 0.3 ohm
 0.03 ohm
  0.3 ohm

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Power Electronics
During reverse recovery time

  both B and C.
 charge carrier of junction J1 is swept out.
 charge carrier of junction J2 recombined.
 charge carrier of junction J3 is swept out.

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Power Electronics
By which one of the following we can measure the reliability of a string?

 String efficient.
 Factor of safety.
 Reliability factor.
  Derating factor.

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