Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is FCT. MCT. IGBT. GTO. FCT. MCT. IGBT. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During which time maximum conduction spreading take place in the thyristor during turn ON? Same for every case. Rise time. Spread time. Delay time. Same for every case. Rise time. Spread time. Delay time. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ pn junctions Two None of these Four Three Two None of these Four Three ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Maximum power loss occurs during all. rise time. spread time. delay time. all. rise time. spread time. delay time. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is infinity. low. moderate. high. infinity. low. moderate. high. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage. More than Less than Equal to None of these More than Less than Equal to None of these ANSWER DOWNLOAD EXAMIANS APP
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