Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is FCT. GTO. MCT. IGBT. FCT. GTO. MCT. IGBT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is not a characteristic of UJT? Negative resistance Intrinsic stand off ratio Peak-point voltage Bilateral conduction Negative resistance Intrinsic stand off ratio Peak-point voltage Bilateral conduction ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The maximum di/dt in a SCR is Directly proportional to supply voltage. Both A and B. Inversely proportional to supply voltage. Directly proportional to inductance in the circuit. Directly proportional to supply voltage. Both A and B. Inversely proportional to supply voltage. Directly proportional to inductance in the circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Latching current for an SCR inserted between a dc voltage source of 200 V and load is 100 mA. Compute the minimum rate of width pulse required to turn ON the SCR in case load consists of R = 20 Ω in series with L = 0.2 H. 300 µs. 100 µs. 200 µs. 150 µs. 300 µs. 100 µs. 200 µs. 150 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If the anode current is 800 A, then the amount of current required to turn off the GTO is about 400 A. 600 A. 200 A. 20 A. 400 A. 600 A. 200 A. 20 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is moderate. low. infinity. high. moderate. low. infinity. high. ANSWER DOWNLOAD EXAMIANS APP
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