Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. IGBT. FCT. GTO. MCT. IGBT. FCT. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thermal voltage VT can be given by Kq/T. (K2/q)(T + 1/T - 1). KT/q. qT/K. Kq/T. (K2/q)(T + 1/T - 1). KT/q. qT/K. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac is simply ___________. A triac without gate terminal A three junction device None of these A single junction device A triac without gate terminal A three junction device None of these A single junction device ANSWER DOWNLOAD EXAMIANS APP
Power Electronics By which one of the following we can measure the reliability of a string? Derating factor. Reliability factor. Factor of safety. String efficient. Derating factor. Reliability factor. Factor of safety. String efficient. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Delay time is defined by the interval when all of these. gate current increases from 90 % to 100 % of its final value. anode current reaches 10 % from forward leakage current. anode voltage drops from 100 % to 90 % of its actual value. all of these. gate current increases from 90 % to 100 % of its final value. anode current reaches 10 % from forward leakage current. anode voltage drops from 100 % to 90 % of its actual value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a UJT, the p-type emitter is ___________ doped Heavily None of these Moderately Lightly Heavily None of these Moderately Lightly ANSWER DOWNLOAD EXAMIANS APP