Power Electronics Which of the following is disadvantage of fast recovery diodes? None of these. Recovery is only 5 µs. Recovery is only 50 µs. Doping is carried out. None of these. Recovery is only 5 µs. Recovery is only 50 µs. Doping is carried out. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thyristor can be protected from over voltages by using snubber circuit. heat sink. voltage clamping device. fuse. snubber circuit. heat sink. voltage clamping device. fuse. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that exhibits negative resistance region is ___________. Triac Diac Transistor UJT Triac Diac Transistor UJT ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Cut-off None of these Negative resistance Saturation Cut-off None of these Negative resistance Saturation ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The function of snubber circuit connected across the SCR is to decrease dV / dt. decrease di / dt. suppress dV / dt. increase dV / dt. decrease dV / dt. decrease di / dt. suppress dV / dt. increase dV / dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If a latching current for the circuit shown in figure is 2 mA. Obtain the value of minimum width of the property turn ON the SCR? 3.2 µs 3.1 µs 3.3 µs 3 µs. 3.2 µs 3.1 µs 3.3 µs 3 µs. ANSWER DOWNLOAD EXAMIANS APP