Power Electronics Which of the following is disadvantage of fast recovery diodes? Doping is carried out. Recovery is only 50 µs. Recovery is only 5 µs. None of these. Doping is carried out. Recovery is only 50 µs. Recovery is only 5 µs. None of these. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The typical time of rising time lies between 90 - 100 µs. 10 - 20 µs. 1 - 4 µs. 40 - 60 µs. 90 - 100 µs. 10 - 20 µs. 1 - 4 µs. 40 - 60 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which statement is true for latching current ? It is related to turn on process of the device. It is related to conduction process of device. Both C and D. It is related to turn off process of the device. It is related to turn on process of the device. It is related to conduction process of device. Both C and D. It is related to turn off process of the device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics How can we protect SCR from thermal conditions ? Use of snubber circuit. Using heat sink. Using CB and fuse. Using equalizing circuit. Use of snubber circuit. Using heat sink. Using CB and fuse. Using equalizing circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of SITs and MOSFETs. None of these. BJTs and MOSFETs. BJTs and SITs. SITs and MOSFETs. None of these. BJTs and MOSFETs. BJTs and SITs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A thyristor string is made of a no. of SCR connected in series and parallel. The string have volume and current of 11 KV and 4 KA. The voltage and current rating of available SCRs are 1800 V and 1000 A. For a string efficiency of 90 % let the number of SCRs in series and parallel are a and b respectively. Then the value of a and b will be 7, 5. 5, 7. 6, 4. 4, 6. 7, 5. 5, 7. 6, 4. 4, 6. ANSWER DOWNLOAD EXAMIANS APP
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