Power Electronics Which of the following is disadvantage of fast recovery diodes? None of these. Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. None of these. Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During gate recovery time charge carrier of J1 junction removed. charge carriers of J2 junction recombined. charge carriers of J2 junction is swept out. charge carriers of J3 junction is removed. charge carrier of J1 junction removed. charge carriers of J2 junction recombined. charge carriers of J2 junction is swept out. charge carriers of J3 junction is removed. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics After peak point, the UJT operates in the ___________ region. Saturation Cut-off None of these Negative resistance Saturation Cut-off None of these Negative resistance ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A 200 A thyristor is to be operated in parallel with a 300 A thyristor. The ON state voltage drops are 1.5 V and 1.2 Volts. What is the value of resistance R to be connected in series with each thyristor, so that current through the combination is 500 A and each of them is fully loaded ? 3.0 ohm 0.03 ohm 0.3 ohm 0.3 ohm 3.0 ohm 0.03 ohm 0.3 ohm 0.3 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to Low dv/dt. Low di/dt. High dv/dt. High di/dt. Low dv/dt. Low di/dt. High dv/dt. High di/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Power transistor are type of All of above. BJTs. MOSFETs. IGBTs. All of above. BJTs. MOSFETs. IGBTs. ANSWER DOWNLOAD EXAMIANS APP
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