Power Electronics Which of the following is disadvantage of fast recovery diodes? Doping is carried out. None of these. Recovery is only 50 µs. Recovery is only 5 µs. Doping is carried out. None of these. Recovery is only 50 µs. Recovery is only 5 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the intrinsic stand off ratio ___________. Increases Decreases Essentially remains the same None of these Increases Decreases Essentially remains the same None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When a large surge current of very short duration flows through a thyristor then which one of the following device will operate to protect the thyristor ? Fast acting current limiting device (FACL fuse). Snubber circuit. CB. Voltage clamping device. Fast acting current limiting device (FACL fuse). Snubber circuit. CB. Voltage clamping device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac is simply ___________. None of these A triac without gate terminal A three junction device A single junction device None of these A triac without gate terminal A three junction device A single junction device ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Latching current for an SCR inserted between a dc voltage source of 200 V and load is 100 mA. Compute the minimum rate of width pulse required to turn ON the SCR in case load consists of R = 20 Ω in series with L = 0.2 H. 100 µs. 150 µs. 200 µs. 300 µs. 100 µs. 150 µs. 200 µs. 300 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Gate circuit or triggering circuit of a thyristor is may be low power or high power circuit. high power circuit. lower power circuit. magnetic circuit. may be low power or high power circuit. high power circuit. lower power circuit. magnetic circuit. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS