Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Increases None of these Remains the same Decreases Increases None of these Remains the same Decreases ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to High di/dt. Low dv/dt. Low di/dt. High dv/dt. High di/dt. Low dv/dt. Low di/dt. High dv/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Rise time is defined by the interval when anode current rises 10 % to 90 % of its final value. both B and C. gate current rises from 90 % to 100 % of it final value. anode voltage drops from 90 % to 10 % of its initial value. anode current rises 10 % to 90 % of its final value. both B and C. gate current rises from 90 % to 100 % of it final value. anode voltage drops from 90 % to 10 % of its initial value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which triggering is the most reliable? Thermal triggering. dV / dt triggering. Gate triggering. Forward voltage triggering. Thermal triggering. dV / dt triggering. Gate triggering. Forward voltage triggering. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of SCR is 20 mA. Its holding current will be 10 mA. 40 mA. 60 mA. 23 mA. 10 mA. 40 mA. 60 mA. 23 mA. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of GTO should be of order 100 mA. 500 mA. 1 A. 2 A. 100 mA. 500 mA. 1 A. 2 A. ANSWER DOWNLOAD EXAMIANS APP
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