Power Electronics Which following is a two terminal three layer device? Power dioed. None of above. BJT. MOSFET. Power dioed. None of above. BJT. MOSFET. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to High dv/dt. Low di/dt. Low dv/dt. High di/dt. High dv/dt. Low di/dt. Low dv/dt. High di/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Leakage current flows through the thyristor in forward blocking mode. both forward and reverse blocking mode. reverse blocking mode. forward conduction mode. forward blocking mode. both forward and reverse blocking mode. reverse blocking mode. forward conduction mode. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Rise time is defined by the interval when both B and C. anode current rises 10 % to 90 % of its final value. gate current rises from 90 % to 100 % of it final value. anode voltage drops from 90 % to 10 % of its initial value. both B and C. anode current rises 10 % to 90 % of its final value. gate current rises from 90 % to 100 % of it final value. anode voltage drops from 90 % to 10 % of its initial value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is infinity. high. moderate. low. infinity. high. moderate. low. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A 200 A thyristor is to be operated in parallel with a 300 A thyristor. The ON state voltage drops are 1.5 V and 1.2 Volts. What is the value of resistance R to be connected in series with each thyristor, so that current through the combination is 500 A and each of them is fully loaded ? 0.03 ohm 0.3 ohm 3.0 ohm 0.3 ohm 0.03 ohm 0.3 ohm 3.0 ohm 0.3 ohm ANSWER DOWNLOAD EXAMIANS APP
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