Power Electronics The device that does not have the gate terminal is ___________. Triac Diac SCR FET Triac Diac SCR FET ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The maximum di/dt in a SCR is Directly proportional to supply voltage. Inversely proportional to supply voltage. Both A and B. Directly proportional to inductance in the circuit. Directly proportional to supply voltage. Inversely proportional to supply voltage. Both A and B. Directly proportional to inductance in the circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to Low di/dt. High di/dt. High dv/dt. Low dv/dt. Low di/dt. High di/dt. High dv/dt. Low dv/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? BJT. Microwave transistor. Power MOSFET. Schottky diode. BJT. Microwave transistor. Power MOSFET. Schottky diode. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics For an SCR gate cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance? 108 ohm 115 ohm 111.9 ohm 11.19 ohm 108 ohm 115 ohm 111.9 ohm 11.19 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In reverse blocking mode of a thyristor junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
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