Power Electronics Gate circuit or triggering circuit of a thyristor is may be low power or high power circuit. lower power circuit. magnetic circuit. high power circuit. may be low power or high power circuit. lower power circuit. magnetic circuit. high power circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant None of these Transistor SCR UJT None of these Transistor SCR UJT ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that does not have the gate terminal is ___________. FET Diac SCR Triac FET Diac SCR Triac ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to Low dv/dt. Low di/dt. High dv/dt. High di/dt. Low dv/dt. Low di/dt. High dv/dt. High di/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a UJT, the p-type emitter is ___________ doped Lightly Moderately None of these Heavily Lightly Moderately None of these Heavily ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the intrinsic stand off ratio ___________. Essentially remains the same Increases None of these Decreases Essentially remains the same Increases None of these Decreases ANSWER DOWNLOAD EXAMIANS APP
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