In a bipolar transistor, the base collector junction has Forward bias Zero bias Zero or forward bias Reverse bias TRUE ANSWER : ? YOUR ANSWER : ?
Permalloy is A nickel an iron alloy having high permeability A conon-ferrous alloy used in aircraft industry A variety of stainless steel A polymer TRUE ANSWER : ? YOUR ANSWER : ?
In monolithic ICs, all the components are fabricated by Oxidation Evaporation None Diffusion process TRUE ANSWER : ? YOUR ANSWER : ?
Forbidden energy gap in germanium at 0 K is about 0.78 eV 2 eV 10 eV 5 eV TRUE ANSWER : ? YOUR ANSWER : ?
When avalanche breakdown occurs covalent bonds are not affected. True False TRUE ANSWER : ? YOUR ANSWER : ?
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true TRUE ANSWER : ? YOUR ANSWER : ?
At room temperature the current in an intrinsic semiconductor is due to Ions Electrons Holes and electrons Holes TRUE ANSWER : ? YOUR ANSWER : ?
Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true TRUE ANSWER : ? YOUR ANSWER : ?
In a semiconductor diode, the barrier offers opposition to Free electrons in N-region only Majority as well as minority carriers in both regions Majority carriers in both regions Holes in P-region only TRUE ANSWER : ? YOUR ANSWER : ?
The amount of photoelectric emission current depends on Both frequency and intensity of incident radiation Intensity of incident radiation Frequency of incident radiation None of these TRUE ANSWER : ? YOUR ANSWER : ?