Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A TRUE ANSWER : ? YOUR ANSWER : ?
In monolithic ICs, all the components are fabricated by Oxidation Diffusion process Evaporation None TRUE ANSWER : ? YOUR ANSWER : ?
Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true TRUE ANSWER : ? YOUR ANSWER : ?
In a semiconductor diode, the barrier offers opposition to Holes in P-region only Majority as well as minority carriers in both regions Majority carriers in both regions Free electrons in N-region only TRUE ANSWER : ? YOUR ANSWER : ?
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false TRUE ANSWER : ? YOUR ANSWER : ?
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase by the same amount The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount TRUE ANSWER : ? YOUR ANSWER : ?
In which of these is reverse recovery time nearly zero? Zener diode Tunnel diode PIN diode Schottky diode TRUE ANSWER : ? YOUR ANSWER : ?
Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor Wideband gap semiconductor TRUE ANSWER : ? YOUR ANSWER : ?
As compared to bipolar junction transistor, a FET Has higher input resistance Is less noisy Has better thermal stability All of these TRUE ANSWER : ? YOUR ANSWER : ?
In a bipolar transistor, the emitter base junction has Zero or reverse bias Forward bias Reverse bias Zero bias TRUE ANSWER : ? YOUR ANSWER : ?