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ELECTRONIC DEVICES AND CIRCUITS QUIZ

Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

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In monolithic ICs, all the components are fabricated by

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Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow.

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In a semiconductor diode, the barrier offers opposition to

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Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

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An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

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In which of these is reverse recovery time nearly zero?

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Silicon is not suitable for fabrication of light emitting diodes because it is

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As compared to bipolar junction transistor, a FET

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In a bipolar transistor, the emitter base junction has

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