Analog Electronics For Germanium pn junction, the maximum value of barrier potential is 0.7V 1.5V 0.3V 1.6V 0.7V 1.5V 0.3V 1.6V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A semiconductor material is formed by Electrovalent bonds None of these Covalent bonds Metallic bonds Electrovalent bonds None of these Covalent bonds Metallic bonds ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For a JEFT, when VDS is increased beyond the pinch-off voltage, the drain electric current first increase and then decreased. decreases. increased. remains constant. first increase and then decreased. decreases. increased. remains constant. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a bipolar junction transistor the base region is made very thin so that recombination in base region is minimum. base can be easily fabricated. base can be easily biased. electric field gradient in base is high. recombination in base region is minimum. base can be easily fabricated. base can be easily biased. electric field gradient in base is high. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Avalanche breakdown in a diode occurs when forward electric current exceeds certain value. None of these potential barrier is reduced to zero. reverse bias exceeds a certain value. forward electric current exceeds certain value. None of these potential barrier is reduced to zero. reverse bias exceeds a certain value. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The most commonly used semiconductor is Silicon Carbon Sulphur Germanium Silicon Carbon Sulphur Germanium ANSWER DOWNLOAD EXAMIANS APP
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