Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 5 eV 0.78 eV 2 eV 10 eV 5 eV 0.78 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority carriers in both regions Holes in P-region only Free electrons in N-region only Majority as well as minority carriers in both regions Majority carriers in both regions Holes in P-region only Free electrons in N-region only Majority as well as minority carriers in both regions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Is less noisy Has better thermal stability Has higher input resistance All of these Is less noisy Has better thermal stability Has higher input resistance All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Germanium Silicon None of these Mixture of silicon and germanium Germanium Silicon None of these Mixture of silicon and germanium ANSWER DOWNLOAD EXAMIANS APP
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