Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority as well as minority carriers in both regions Free electrons in N-region only Majority carriers in both regions Holes in P-region only Majority as well as minority carriers in both regions Free electrons in N-region only Majority carriers in both regions Holes in P-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Is less noisy Has higher input resistance All of these Has better thermal stability Is less noisy Has higher input resistance All of these Has better thermal stability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Silicon Mixture of silicon and germanium Germanium None of these Silicon Mixture of silicon and germanium Germanium None of these ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS