ANALOG ELECTRONICS

  all of these.

  the base region must be very thin and lightly doped.

  Je must be forward biased and Jc should be reverse biased.

  the emitter should be heavily doped.

  in the forward direction to the collector junction with emitter open.

  in the reverse direction to the collector junction with emitter open.

  in the reverse direction to the emitter junction with collector open.

  in the forward direction to the emitter junction with collector open.

  is generally greater in silicon than in germanium transistor.

  increases with the increase in temperature.

  depends largely upon emitter-base junction base potential.

  depends largely upon the emitter doping.

  emitter and collector leads.

  emitter and base leads.

  none of them.

  collector and base leads.

  through emitter-collector

  in base.

  in collector.

  in emitter.