ANALOG ELECTRONICS

  Je must be forward biased and Jc should be reverse biased.

  all of these.

  the base region must be very thin and lightly doped.

  the emitter should be heavily doped.

  in the forward direction to the collector junction with emitter open.

  in the reverse direction to the collector junction with emitter open.

  in the reverse direction to the emitter junction with collector open.

  in the forward direction to the emitter junction with collector open.

  increases with the increase in temperature.

  is generally greater in silicon than in germanium transistor.

  depends largely upon emitter-base junction base potential.

  depends largely upon the emitter doping.

  collector and base leads.

  emitter and collector leads.

  none of them.

  emitter and base leads.

  in emitter.

  in collector.

  in base.

  through emitter-collector