ANALOG ELECTRONICS

  Je must be forward biased and Jc should be reverse biased.

  the base region must be very thin and lightly doped.

  the emitter should be heavily doped.

  all of these.

  in the forward direction to the collector junction with emitter open.

  in the reverse direction to the collector junction with emitter open.

  in the forward direction to the emitter junction with collector open.

  in the reverse direction to the emitter junction with collector open.

  depends largely upon the emitter doping.

  increases with the increase in temperature.

  depends largely upon emitter-base junction base potential.

  is generally greater in silicon than in germanium transistor.

  none of them.

  emitter and collector leads.

  collector and base leads.

  emitter and base leads.

  in collector.

  in emitter.

  in base.

  through emitter-collector