Analog Electronics The magnitude of electric current ICBO is generally greater in silicon than in germanium transistor. increases with the increase in temperature. depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. increases with the increase in temperature. depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For an NPN transistor in normal bias Je is forward biased and Jc is reverse biased. only holes cross the collector junction. only majority carriers cross the collector junction. the emitter junction has high resistance. Je is forward biased and Jc is reverse biased. only holes cross the collector junction. only majority carriers cross the collector junction. the emitter junction has high resistance. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The collector current is 1.5 mA. If the current gain is 50, the base current is 3 µA. 3 mA. 30 µA. 150 µA. 3 µA. 3 mA. 30 µA. 150 µA. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What will be the result if pentavalent impurity is added to pure germanium or silicon ? None of these N-type semiconductor P-type semiconductor Intrinsic semiconductor None of these N-type semiconductor P-type semiconductor Intrinsic semiconductor ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A 741 C has All of these a voltage gain of 100,000. an input impedance of 2 MΩ. an output impedance of 75 Ω. All of these a voltage gain of 100,000. an input impedance of 2 MΩ. an output impedance of 75 Ω. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A semiconductor material is formed by Metallic bonds None of these Electrovalent bonds Covalent bonds Metallic bonds None of these Electrovalent bonds Covalent bonds ANSWER DOWNLOAD EXAMIANS APP
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