Analog Electronics The magnitude of electric current ICBO is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. increases with the increase in temperature. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What is the range of energy band gap of semiconductors ? 14-15 ev 1-3 ev 10-15 ev 0 ev 14-15 ev 1-3 ev 10-15 ev 0 ev ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a JFET, if the gate voltage Vgs is made more negative, then channel electric current increases . channel conductivity increases. depletion region decreases. channel conductivity decreases. channel electric current increases . channel conductivity increases. depletion region decreases. channel conductivity decreases. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Darlington connection is achieved in 2 transistors by connecting both collector. both base. both emitter. grounding both collector. both collector. both base. both emitter. grounding both collector. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Secondary breakdown occures in Both BJT and MOSFET. None of these. BJT but not is MOSFET. MOSFET but not in BJT. Both BJT and MOSFET. None of these. BJT but not is MOSFET. MOSFET but not in BJT. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a transistor leakage current mainly depends on Doping of base Rating of transistor Size of emitter Temperature Doping of base Rating of transistor Size of emitter Temperature ANSWER DOWNLOAD EXAMIANS APP
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