Analog Electronics
The magnitude of electric current ICBO

  depends largely upon emitter-base junction base potential.
  increases with the increase in temperature.
  is generally greater in silicon than in germanium transistor.
  depends largely upon the emitter doping.

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Analog Electronics
For an NPN transistor in normal bias

  the emitter junction has high resistance.
  only holes cross the collector junction.
  Je is forward biased and Jc is reverse biased.
  only majority carriers cross the collector junction.

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