Analog Electronics The magnitude of electric current ICBO is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. increases with the increase in temperature. depends largely upon emitter-base junction base potential. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. increases with the increase in temperature. depends largely upon emitter-base junction base potential. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For a JEFT, when VDS is increased beyond the pinch-off voltage, the drain electric current increased. first increase and then decreased. decreases. remains constant. increased. first increase and then decreased. decreases. remains constant. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A depletion MOSFET differs from a JFET in the sense that it has no channel. substrate. p - n junction. gate. channel. substrate. p - n junction. gate. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Depending upon the switching recovery time and on state drop, the power diodes are types Fast recovery, Schottky. General purpose, fast recovery. General purpose, fast recovery and schottly. None of these. Fast recovery, Schottky. General purpose, fast recovery. General purpose, fast recovery and schottly. None of these. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Ignoring the bulk resistance of the collector diode, the collector-emitter saturation voltage is supply voltage. a few tenths of a volt. 0. 1 V. supply voltage. a few tenths of a volt. 0. 1 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of the following oscillators are used for low frequency (LF) applications Both LC and RC Oscillators None RC oscillators LC oscillators Both LC and RC Oscillators None RC oscillators LC oscillators ANSWER DOWNLOAD EXAMIANS APP
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