Analog Electronics Which of the following transistor configuration circuit is much less temperature dependent ? None of these Common emitter. Common collector. Common base. None of these Common emitter. Common collector. Common base. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO depends largely upon emitter-base junction base potential. increases with the increase in temperature. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. increases with the increase in temperature. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A zener diode is forward biased. is a battery. has a barrier potential of 1 V. has a constant voltage in the breakdown region. is forward biased. is a battery. has a barrier potential of 1 V. has a constant voltage in the breakdown region. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When pn junction is reverse biased the witdh of depletion layer increases it offers a very high resistance All of these a small current flows through it because of minority carriers the witdh of depletion layer increases it offers a very high resistance All of these a small current flows through it because of minority carriers ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Base of a number system is also known as value shift radix count value shift radix count ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a JFET, the primary control on drain electric current is exerted by voltage drop across channel. channel resistance. size of depletion regions. gate reverse bias. voltage drop across channel. channel resistance. size of depletion regions. gate reverse bias. ANSWER DOWNLOAD EXAMIANS APP
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