Analog Electronics When will be the P-N junction is formed ? In depletion region Two opposite doped materials In reverse biased region None of these In depletion region Two opposite doped materials In reverse biased region None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The AC base voltage of an emitter follower is across the load resistor. emitter diode and external AC emitter resistance. DC emitter resistor. emitter diode. load resistor. emitter diode and external AC emitter resistance. DC emitter resistor. emitter diode. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Electron mobility is defined as Drift velocity per unit field Diffusion velocity per unit field None of these the movement of electrons Drift velocity per unit field Diffusion velocity per unit field None of these the movement of electrons ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When were the first solid state devices manufactured ? 1950 1970 1940 1960 1950 1970 1940 1960 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The transition capacitance of a reverse biased pn junction having uniform doping on both sides, varies with junction voltage ( VB ) as 1 / VB. ( VB )2. ( VB )- 1 / 2. VB. 1 / VB. ( VB )2. ( VB )- 1 / 2. VB. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a MOSFET, the polarity of the inversion layer is the same as that of the charge on the gate electrode. minority carriers in the drain . majority carries in the substrate. majority carries in the source . charge on the gate electrode. minority carriers in the drain . majority carries in the substrate. majority carries in the source . ANSWER DOWNLOAD EXAMIANS APP
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