Analog Electronics When will be the P-N junction is formed ? In reverse biased region Two opposite doped materials None of these In depletion region In reverse biased region Two opposite doped materials None of these In depletion region ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Secondary breakdown occures in Both BJT and MOSFET. None of these. BJT but not is MOSFET. MOSFET but not in BJT. Both BJT and MOSFET. None of these. BJT but not is MOSFET. MOSFET but not in BJT. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a JFET, if the gate voltage Vgs is made more negative, then channel conductivity decreases. channel electric current increases . channel conductivity increases. depletion region decreases. channel conductivity decreases. channel electric current increases . channel conductivity increases. depletion region decreases. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The current gain of a pnp transistor is the ratio of collector current to emitter current. near zero. the negative of the npn current gain. the collector current divided by the emitter current. the ratio of collector current to emitter current. near zero. the negative of the npn current gain. the collector current divided by the emitter current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A LED produces light when reverse biased. None of these forward biased. unbiased. reverse biased. None of these forward biased. unbiased. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. increases with the increase in temperature. depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. increases with the increase in temperature. ANSWER DOWNLOAD EXAMIANS APP
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