Analog Electronics When a reverse bias is applied to gate of JFET the depletion region width is uniform in the channel. is wider near the source and tapers near the drain. is wider near the drain and tapers near source. None of these is uniform in the channel. is wider near the source and tapers near the drain. is wider near the drain and tapers near source. None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Field effect transistor (FET) operates on minority carries only . on both majority and minority carriers. majority carriers only. positive charged ions only. minority carries only . on both majority and minority carriers. majority carriers only. positive charged ions only. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Barrier potential at the temperature (25°C) is 0.7 V, its value at 125°C is 0.9 V. 0.7 V. 0.5 V. 0.3 V. 0.9 V. 0.7 V. 0.5 V. 0.3 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The resistance of pn junction when it is forward biased in the order of Kilo Ohm Ohm Mega Ohm None of these Kilo Ohm Ohm Mega Ohm None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A U shaped, opposite-polarity material built near a JFET-channel center is called the gate. heat sink. block. drain. gate. heat sink. block. drain. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a properly biased NPN transistor most of the electrons from the emitter recombine with holes in the base . are stopped by the junction barrier. pass through the base to the collector. recombine in the emitter its self. recombine with holes in the base . are stopped by the junction barrier. pass through the base to the collector. recombine in the emitter its self. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS