Power Electronics Thermal voltage VT can be given by KT/q. (K2/q)(T + 1/T - 1). qT/K. Kq/T. KT/q. (K2/q)(T + 1/T - 1). qT/K. Kq/T. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A 200 A thyristor is to be operated in parallel with a 300 A thyristor. The ON state voltage drops are 1.5 V and 1.2 Volts. What is the value of resistance R to be connected in series with each thyristor, so that current through the combination is 500 A and each of them is fully loaded ? 3.0 ohm 0.03 ohm 0.3 ohm 0.3 ohm 3.0 ohm 0.03 ohm 0.3 ohm 0.3 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics For an SCR gate cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance? 11.19 ohm 111.9 ohm 108 ohm 115 ohm 11.19 ohm 111.9 ohm 108 ohm 115 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of GTO should be of order 1 A. 2 A. 500 mA. 100 mA. 1 A. 2 A. 500 mA. 100 mA. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac can pass a portion of ___________ half-cycle through the load. Only positive None of these Both positive and negative Only negative Only positive None of these Both positive and negative Only negative ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. IGBT. FCT. MCT. GTO. IGBT. FCT. MCT. ANSWER DOWNLOAD EXAMIANS APP
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