Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases The mobility decreases The transconductance increases None of these The drain current increases The mobility decreases The transconductance increases None of these The drain current increases ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The number of valence electrons in silicon atom are : 2 1 3 4 2 1 3 4 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In CB configuration, the output V-I characteristics of a transistor are drawn by taking VCE versus IC for constant IE. VCB versus IB for constant IE. VCB versus IB for constant IE. VCB versus IC for constant IE. VCE versus IC for constant IE. VCB versus IB for constant IE. VCB versus IB for constant IE. VCB versus IC for constant IE. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The input voltage to an emitter follower is usually greater than the generator voltage. equal to the supply voltage. equal to the generator voltage. less than the generator voltage. greater than the generator voltage. equal to the supply voltage. equal to the generator voltage. less than the generator voltage. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is 0.75 0.5 1 0.25 0.75 0.5 1 0.25 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Reverse recovery current in a diode depends upon PIV. Storage change. Temperature. Forward field current. PIV. Storage change. Temperature. Forward field current. ANSWER DOWNLOAD EXAMIANS APP
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