Analog Electronics The emitter of the transistor is doped moderately. lightly. heavily. none of these moderately. lightly. heavily. none of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In modern the MOSFET, the material used for the gate is epitaxially grown silicon. high - purity silica. heavily doped poly crystalline silicon. high - purity silicon. epitaxially grown silicon. high - purity silica. heavily doped poly crystalline silicon. high - purity silicon. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Input impedance of MOSFET is more than that of FET and BJT. less than that of FET and BJT. more than that of FET but less than BJT. less than of FET but more than BJT. more than that of FET and BJT. less than that of FET and BJT. more than that of FET but less than BJT. less than of FET but more than BJT. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For a reverse biased pn junction, the electric current through the junction increases abruptly at 7.2 eV. 0.2 eV. breakdown voltage. 0 V. 7.2 eV. 0.2 eV. breakdown voltage. 0 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Darlington connection is achieved in 2 transistors by connecting both emitter. both base. grounding both collector. both collector. both emitter. both base. grounding both collector. both collector. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A 3 - phase diode bridge rectifier is fed from a 400 V rms, 50 Hz, 3 phase AC source. If the load is purely resistive, then peak instantaneous output voltage is equal to 400√ (2/3) V. 400 V. 400 / √ 3 V. 400√ 2 V. 400√ (2/3) V. 400 V. 400 / √ 3 V. 400√ 2 V. ANSWER DOWNLOAD EXAMIANS APP
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