Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following is normally ON device BJT. IGBT. SIT. TRIAC. BJT. IGBT. SIT. TRIAC. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which statement is true for latching current ? It is related to conduction process of device. It is related to turn off process of the device. Both C and D. It is related to turn on process of the device. It is related to conduction process of device. It is related to turn off process of the device. Both C and D. It is related to turn on process of the device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Why resistor is used in Snubber circuit ? To minimize the discharging current. To minimize the charging current. All of these. To minimize the loss . To minimize the discharging current. To minimize the charging current. All of these. To minimize the loss . ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a UJT, the p-type emitter is ___________ doped Lightly Moderately None of these Heavily Lightly Moderately None of these Heavily ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SIT. SITH. GTO. SCR. SIT. SITH. GTO. SCR. ANSWER DOWNLOAD EXAMIANS APP
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