Analog Electronics In a p⁺n junction diode under reverse bias , the magnitude of electric field is maximum at The edge of the depletion region on the n-side The edge of the depletion region on the p-side The center of the depletion region on the n-side The p⁺n junction The edge of the depletion region on the n-side The edge of the depletion region on the p-side The center of the depletion region on the n-side The p⁺n junction ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A semiconductor diode is bilateral device non-linear device a processing device linear device bilateral device non-linear device a processing device linear device ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Barrier potential at the temperature (25°C) is 0.7 V, its value at 125°C is 0.7 V. 0.5 V. 0.9 V. 0.3 V. 0.7 V. 0.5 V. 0.9 V. 0.3 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For Germanium pn junction, the maximum value of barrier potential is 0.3V 1.6V 1.5V 0.7V 0.3V 1.6V 1.5V 0.7V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The emitter of the transistor is generally doped the heaviest because it is the first region of transistor. has to supply the charge carriers. must possess low resistance. has to dissipate maximum power. is the first region of transistor. has to supply the charge carriers. must possess low resistance. has to dissipate maximum power. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Doping in a semiconductor increases which quantity Inductance None Resistance Conductance Inductance None Resistance Conductance ANSWER DOWNLOAD EXAMIANS APP
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