Analog Electronics IGFET is a half - power device. 3 / 2 power - low device . square - law device. linear device. half - power device. 3 / 2 power - low device . square - law device. linear device. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Reverse recovery current in a diode depends upon Temperature. PIV. Storage change. Forward field current. Temperature. PIV. Storage change. Forward field current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics To prevent a DC return between source and load, it is necessary to use Inductor between source and load Either A or B Capacitor between source and load Resistor between source and load Inductor between source and load Either A or B Capacitor between source and load Resistor between source and load ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The encapsulation of transistor is necessary for Avoiding loss of free electrons Preventing photo-emission effects Preventing radio interference Mechanical ruggedness Avoiding loss of free electrons Preventing photo-emission effects Preventing radio interference Mechanical ruggedness ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When a reverse bias is applied to a diode, it will increases the majority carrier an electric current greatly. none of these. raise the potential barrier. lower the potential barrier. increases the majority carrier an electric current greatly. none of these. raise the potential barrier. lower the potential barrier. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The base of an npn transistor is thin and lightly doped. heavily doped. metallic. doped by a pentavalent material. lightly doped. heavily doped. metallic. doped by a pentavalent material. ANSWER DOWNLOAD EXAMIANS APP
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