Analog Electronics Energy gap of conductor is 5 - 8 eV. 8 eV. 1 - 2 eV. 0 eV. 5 - 8 eV. 8 eV. 1 - 2 eV. 0 eV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What will be the Potential barrier for Ge Diode ? 0.3V 0.7V 0.03V 0.5V 0.3V 0.7V 0.03V 0.5V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Asource follower using an FET usually has a voltage gain which is Exactly unity but negative Greater than +100 Slightly less than unity but positive About -10 Exactly unity but negative Greater than +100 Slightly less than unity but positive About -10 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The Q-point in a voltage amplifier is selected in the middle of the active region because it gives better stability. it gives distortions less output. the biasing circuit then need less number of resistors. the circuit needs a small. it gives better stability. it gives distortions less output. the biasing circuit then need less number of resistors. the circuit needs a small. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In MOSFET devices the N-channel type is better the P-channel type in the following respects it has better drive capability. it has better noise immunity. it is faster. it is TTL compatible. it has better drive capability. it has better noise immunity. it is faster. it is TTL compatible. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Silicon and Germanium are ________ elements. trivalant hexavalant pentavalant tetravalant trivalant hexavalant pentavalant tetravalant ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS