Analog Electronics Depletion region of a p-n junction is formed During Manufacturing During Reverse bias During Forward bias During Heating During Manufacturing During Reverse bias During Forward bias During Heating ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The junction capacitance of linearly graded junction varies with the applied reverse bias, VR as (VR)- 1. (VR)1/2. (VR)- 1/3. (VR)- 1/2. (VR)- 1. (VR)1/2. (VR)- 1/3. (VR)- 1/2. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Energy gap of conductor is 1 - 2 eV. 8 eV. 0 eV. 5 - 8 eV. 1 - 2 eV. 8 eV. 0 eV. 5 - 8 eV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of the following does not obey the Ohm's law? None of these Bilateral device Semiconductor Resistor None of these Bilateral device Semiconductor Resistor ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For Germanium pn junction, the maximum value of barrier potential is 1.6V 0.7V 1.5V 0.3V 1.6V 0.7V 1.5V 0.3V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a MOSFET, the polarity of the inversion layer is the same as that of the minority carriers in the drain . majority carries in the substrate. charge on the gate electrode. majority carries in the source . minority carriers in the drain . majority carries in the substrate. charge on the gate electrode. majority carries in the source . ANSWER DOWNLOAD EXAMIANS APP
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