Analog Electronics Common emitter current gain hFE of a BJT is Dependent on base -emitter voltage. Always constant. Dependent on collector-emitter voltage. Dependent on collector current. Dependent on base -emitter voltage. Always constant. Dependent on collector-emitter voltage. Dependent on collector current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The silicon transistor are more widely used than germanium transistors because they have larger electric current carrying capacity. they have smaller leakage current. they have smaller depletion layer. they have better ability to dissipate heat. they have larger electric current carrying capacity. they have smaller leakage current. they have smaller depletion layer. they have better ability to dissipate heat. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics How will be the extrinsic semiconductor act at room temperature ? None of these Poor conductor Medium Conductor Conductor None of these Poor conductor Medium Conductor Conductor ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The common-mode voltage gain is greater than the voltage gain. None of these smaller than the voltage gain. equal to the voltage gain. greater than the voltage gain. None of these smaller than the voltage gain. equal to the voltage gain. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The action of JFET in its equivalent circuit can best be represented as a Current controlled Current source Current controlled voltage source voltage controlled current source Voltage controlled voltage source Current controlled Current source Current controlled voltage source voltage controlled current source Voltage controlled voltage source ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is 0.75 0.25 1 0.5 0.75 0.25 1 0.5 ANSWER DOWNLOAD EXAMIANS APP
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