Power Electronics Anode current in an SCR consists of Both electron and holes. holes only. either electron or holes. electrons only. Both electron and holes. holes only. either electron or holes. electrons only. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SITH. SCR. GTO. SIT. SITH. SCR. GTO. SIT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to High dv/dt. Low dv/dt. High di/dt. Low di/dt. High dv/dt. Low dv/dt. High di/dt. Low di/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac has ___________ semiconductor layers. Four Three Two Five Four Three Two Five ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of BJTs and MOSFETs. None of these. SITs and MOSFETs. BJTs and SITs. BJTs and MOSFETs. None of these. SITs and MOSFETs. BJTs and SITs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Rise time is defined by the interval when both B and C. gate current rises from 90 % to 100 % of it final value. anode voltage drops from 90 % to 10 % of its initial value. anode current rises 10 % to 90 % of its final value. both B and C. gate current rises from 90 % to 100 % of it final value. anode voltage drops from 90 % to 10 % of its initial value. anode current rises 10 % to 90 % of its final value. ANSWER DOWNLOAD EXAMIANS APP
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