Analog Electronics An npn BJT has gm=38mA/v, cµ =10¯14 F, cπ =10¯13F and DC current gain β0=90.For this transistor fT & fβ are fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is 1 0.75 0.5 0.25 1 0.75 0.5 0.25 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A Schottky diode is a both a majority and a minority carrier diode. fast recovery diode. majority carrier device. minority carrier device. both a majority and a minority carrier diode. fast recovery diode. majority carrier device. minority carrier device. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Leakage electric current in CE configuration is very high. not present. normal. very small. very high. not present. normal. very small. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics MOSFET can be used as a Voltage controlled inductors Voltage controlled capacitor Current controlled capacitor Current controlled inductor Voltage controlled inductors Voltage controlled capacitor Current controlled capacitor Current controlled inductor ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a transistor amplifier, the reverse saturation electric current ICO double for every 5° rise in temperature. increase linearly with the temperature. double for every 10° rise in temperature. double for every 1° rise in temperature. double for every 5° rise in temperature. increase linearly with the temperature. double for every 10° rise in temperature. double for every 1° rise in temperature. ANSWER DOWNLOAD EXAMIANS APP
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